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| 2SC5161 Transistors High voltage switching transistor (400V, 2A) 2SC5161 Features 1) Low VCE(sat). VCE(sat)=0.15V (Typ.) (IC/IB=1A/0.2A) 2) High breakdown voltage. VCEO=400V 3) Fast switching. tf 1.0s (IC=0.8A) External dimensions (Unit : mm) 1.50.3 6.50.2 5.1+0.2 -0.1 C0.5 2.3 +0.2 -0.1 0.50.1 5.5 +0.3 -0.1 0.75 0.9 0.650.1 0.50.1 2.30.2 2.30.2 1.00.2 (1) (2) (3) Structure Three-layer, diffused planar type NPN silicon transistor ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 400 400 7 2 4 1 10 150 -55 to +150 Unit V V V A(DC) A(Pulse) W W(Tc=25C) C C Collector power dissipation Junction temperature Storage temperature Single pulse Pw=10ms Rev.A 2.5 9.50.5 0.9 1.5 1/3 2SC5161 Transistors Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Turn-on time Storage time Fall time 1 Measured using pulse current Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob tON tstg tf Min. 400 400 7 - - - - 25 - - - - - Typ. - - - - - - - - 10 30 - - - Max. - - - 10 10 1 1.5 50 - - 1 2.5 1 Unit V V V A A V V - MHz pF s s s IC=50A IC=1mA IE=50A VCB=400V VEB=5V Conditions IC/IB=1A/0.2A IC/IB=1A/0.2A VCE=5V, IC=0.1A VCE=10V,IE=-0.5A,f=5MHz VCB=10V, IE=0A, f=1MHz IC=0.8A, RL=250 IB1=-IB2=0.08A VCC 200V Refer to measurement circuit diagram 1 Packaging specifications and hFE Package name Code Type 2SC5161 hFE B Basic ordering unit (pieces) Taping TL 2500 hFE values are classified as follows : Item hFE B 25 to 50 Electrical characteristic curves 10 5 VCE=5V 2.0 COLLECTOR CURRENT : IC (A) 180mA Tc=25C 1000 500 DC CURRENT GAIN : hFE Ta=25C 120mA 80mA COLLECTOR CURRENT : IC (A) 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 Ta=100C 25C -25C 1.6 200 100 50 20 10 5 2 VCE=10V 5V 1.2 60mA 40mA 0.8 0.4 20mA IB=10mA 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8 10 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current ( ) Rev.A 2/3 2SC5161 Transistors COLLECTOR SATURATION VOLTAGE : VCE(sat ) (V) Ta=25C Ta=25C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) 1000 500 DC CURRENT GAIN : hFE 10 5 2 1 0.5 0.2 0.1 5 0.05 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 10 5 2 1 0.5 0.2 0.1 0.05 0.02 100C 25C -25C 1 2 IC/IB=5 200 100 50 20 10 5 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 Ta=100C 25C -25C Ta=-25C 25C 100C IC/IB=10 2 5 10 0.01 0.01 0.02 0.05 0.1 0.2 0.5 5 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ) Fig.5 Collector-emitter saturation voltage vs. collector current Fig.6 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage vs. collector current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 TRANSITION FREQUENCY : fT (MHz) 500 200 100 50 20 10 5 2 Ta=25C VCE=10V 1000 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 Ta=25C f=1MHz IE=0A 10 5 IC=10IB1=-10IB2 Pulse TURN ON TIME : ton (s) STORAGE TIME : tstg (s) FALL TIME : tf (s) 2 tstg 1 0.5 0.2 0.1 0.05 0.02 tf ton -0.001-0.002 -0.005 -0.01 -0.02 -0.05 -0.1 -0.2 1 -0.5 -1 20 50 100 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 EMITTER CURRENT : IE (A) COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR CURRENT : IC (A) Fig.7 Gain bandwidth product vs. emitter current Fig.8 Collector output capacitance vs. collector-base voltage Fig.9 Switching time vs. collector current Switching characteristic measurement circuit RL=250 VIN IB1 IC T.U.T. IB2 VCC 200V PW PW 50s duty cycle1% Base current wave form IB1 IB2 90% IC Collector current wave form ton 10% tstg tf Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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